Study on Growth of Insulation Materials in AlN Crystals by High Temperature Gas-phase Method
AlN crystal is one of the typical representatives of the third generation semiconductor materials, and has excellent physical properties and chemical stability such as direct bandgap, bandgap width (6.2eV), high breakdown field strength, good thermal stability, and corrosion resistance. , Can be widely used in the field of optoelectronics and microelectronics leading funds project: National Natural Science Foundation of China (60376003, 60576005) Shenzhen Science and Technology Plan Expense Project (200517) domain. AlN crystals are currently the most commonly used growth method is the high temperature physical vapor method, the basic process is the decomposition of the AlN material in the protective gas environment in the high temperature region above 2000 °C decomposition, and then recrystallization in the low temperature region to form AlN crystal 11-3. In such a working environment, it is not feasible to achieve such a high temperature simply by increasing the heating power. The first reason is that the energy consumption is serious, and the second is that the heating coil and the cooling system of the furnace body require high requirements, so it must be good. Thermal insulation device to reduce the loss of heat, ensure the realization of high temperature and protect the growth device.
In this study, combined with theoretical analysis and practical experience, we chose AlN with high chemical stability and high temperature resistance as the main material to successfully fabricate a thermal insulation device suitable for the preparation of AlN crystals at high temperature by gas-phase method. This article will introduce the structure and manufacturing process of the thermal insulation device, analyze its working principle, and do a comparative study on the thermal insulation performance, service life, influence on the growth of AlN crystals and other aspects of AlN thermal insulation materials and graphite thermal insulation materials.
1. The used graphite felt contains more than 95% of C. The ash content is about 014%. It can withstand 2000°C under N2 and other protective atmospheres. Using the growth device shown, the pre-use is in a high-pressure N2 atmosphere. Sintered AlN was used as the material. W was heated to 2200C for 4-12 hours and then cooled to room temperature to complete the growth of AlN crystals. The specific process of crystal growth can be
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